Conventional SO2 scrubbing agents, namely calcium oxide and zeolites, are often used to remove SO2 using a strong or irreversible adsorption-based process. However, adsorbents capable of sensing and selectively capturing this toxic molecule in a reversible manner, with in-depth understanding of structure–property relationships, have been rarely explored. Here we report the selective removal and sensing of SO2 using recently unveiled fluorinated metal–organic frameworks (MOFs). Mixed gas adsorption experiments were performed at low concentrations ranging from 250 p.p.m. to 7% of SO2. Direct mixed gas column breakthrough and/or column desorption experiments revealed an unprecedented SO2 affinity for KAUST-7 (NbOFFIVE-1-Ni) and KAUST-8 (AlFFIVE-1-Ni) MOFs. Furthermore, MOF-coated quartz crystal microbalance transducers were used to develop sensors with the ability to detect SO2 at low concentrations ranging from 25 to 500 p.p.m.

Synthesis of CNT-HKUST-1 composite thin films.  Investigation of morphological, crystalline, and Raman-scattering characteristics of composite thin films.  Coating of HKUST-1 and CNT-HKUST-1 thin films on QCM.  Optimization of CNT-HKUST-1 composite ratio for enhanced humidity detection.

We present a comparative study of two types of sensor with different transduction techniques but coated with the same sensing material to determine the effect of the transduction mechanism on the sensing performance of sensing a target analyte. For this purpose, interdigitated electrode (IDE)-based capacitors and quartz crystal microbalance (QCM)-based resonators were coated with a zeolitic–imidazolate framework (ZIF-8) metal–organic framework thin films as the sensing material and applied to the sensing of the volatile organic compound acetone. Cyclic immersion in methanolic precursor solutions technique was used for depositing the ZIF-8 thin films. The sensors were exposed to various acetone concentrations ranging from 5.3 to 26.5 vol % in N2 and characterized/compared for their sensitivity, hysteresis, long-term and short-term stability, selectivity, detection limit, and effect of temperature. Furthermore, the IDE substrates were used for resistive transduction and compared using capacitive transduction.

Conventional materials for gas/vapor sensing are limited to a single probe detection ability for specific analytes. However, materials capable of concurrent detection of two different probes in their respective harmful levels and using two types of sensing modes have yet to be explored. In particular, the concurrent detection of uncomfortable humidity levels and CO 2 concentration (400−5000 ppm) in confined spaces is of extreme importance in a great variety of fields, such as submarine technology, aerospace, mining, and rescue operations. Herein, we report the deliberate construction and performance assessment of extremely sensitive sensors using an interdigitated electrode (IDE)-based capacitor and a quartz crystal microbalance (QCM) as transducing substrates. The unveiled sensors are able to simultaneously detect CO 2 within the 400−5000 ppm range and relative humidity levels below 40 and above 60%, using two fluorinated metal−organic frameworks, namely, NbOFFIVE-1-Ni and AlFFIVE-1-Ni, fabricated as a thin film. Their subtle difference in a structure−adsorption relationship for H 2 O and CO 2 was analyzed to unveil the corresponding structure−sensing property relationships using both QCM-and IDE-based sensing modes.

There has been remarkable interest in nanomechanical computing elements that can potentially lead to a new era in computation due to their re-configurability, high integration density, and high switching speed. Here we present a nanomechanical device capable of dynamically performing logic operations (NOR, NOT, XNOR, XOR, and AND). The concept is based on the active tuning of the resonance frequency of a doubly-clamped nanoelectromechanical beam resonator through electro-thermal actuation. The performance of this re-configurable logic device is examined at elevated temperatures, ranging from 25 °C to 85 °C, demonstrating its resilience for most of the logic operations. The proposed device can potentially achieve switching rate in μs, switching energy in nJ, and an integration density up to 10 per cm. The practical realization of this re-configurable device paves the way for nano-element-based mechanical computing.

In this paper, we present the synthesis of self-organized TiO2 nanotube arrays formed by anodization of thin Ti film deposited on Si wafers by direct current (D.C.) sputtering. Organic electrolyte was used to demonstrate the growth of stable nanotubes at room temperature with voltages varying from 10 to 60 V (D.C.). The tubes were about 1.4 times longer than the thickness of the sputtered Ti film, showing little undesired dissolution of the metal in the electrolyte during anodization. By varying the thickness of the deposited Ti film, the length of the nanotubes could be controlled precisely irrespective of longer anodization time and/or anodization voltage. Scanning electron microscopy, atomic force microscopy, diffuse-reflectance UV–vis spectroscopy, and X-ray diffraction were used to characterize the thin film nanotubes. The tubes exhibited good adhesion to the wafer and did not peel off after annealing in air at 350 °C to form anatase TiO2. With TiO2 nanotubes on planar/stable Si substrates, one can envision their integration with the current micro-fabrication technique large-scale fabrication of TiO2 nanotube-based devices.

Growth of TiO(2) nanotubes on thin Ti film deposited on Si wafers with site-specific and patterned growth using a photolithography technique is demonstrated for the first time. Ti films were deposited via e-beam evaporation to a thickness of 350-1000 nm. The use of a fluorinated organic electrolyte at room temperature produced the growth of nanotubes with varying applied voltages of 10-60 V (DC) which remained stable after annealing at 500 °C. It was found that variation of the thickness of the deposited Ti film could be used to control the length of the nanotubes regardless of longer anodization time/voltage. Growth of the nanotubes on a SiO(2) barrier layer over a Si wafer, along with site-specific and patterned growth, enables potential application of TiO(2) nanotubes in NEMS/MEMS-type devices.

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