This study aims to prepare Cadmium Sulphide (CdS) thin films using thermal Chemical Spray Pyrolysis (CSP) on glass of different temperatures substrate from cadmium nitrate solution. Constant thickness was (430 ± 20 nm) and the effect of substrate temperature on the optical properties of prepared thin films. Optical properties have been studied from transmittance and absorbance spectral within wavelengths range (360 - 900 nm). The results show that all the prepared films have a direct electron transitions and optical energy gap between (2.31-2.44 eV). They also show that the transmittance and optical energy gap of films prepared from nitrate solution increase with increasing of substrate temperature, then transmittance start downward with the continued increase in temperature (400, 450) oC.
In the present work, undoped CdS and doped with iron CdS:Fe+3 thin films have been prepared by chemical spray pyrolysis method on glass substrate with different temperature from cadmium nitrate solution with constant thickness(450 ± 5 nm), and study the effect of the percentage of doping with iron on optical properties of prepared films. The optical properties have been studied from transmittance and absorbance spectral within wavelengths range (380-900 nm). The results showed that all the prepared films has direct electronic transitions and optical energy gap between (2.31-2.44 eV). They also showed that the transmittance and optical energy gap of films prepared from nitrate solution increase with increasing of substrate temperature, then transmittance start downward with the continued increase in temperature (400, 450 oC), and a decrease in the optical energy gap with increasing doping percentage with iron.
CdO films were prepared using a chemical spray paralysis (CSP) method on the glass substrate at a temperature of 350 ° C and thickness (260 ± 15 nm), and study the effect annealing time (0, 1, 1.5, 2, 2.5) h at annealing temperature 450 °C on structural properties. The X-ray diffraction pattern the results showed that all CdO thin films have a polycrystalline structure and a prevalent growth in the direction (111), and the average grain size (G) in this direction ranges (29.80 - 33.23) nm. It generally increases in value while the agitation values, extraction density, number of crystals decrease by increasing the annealing time (0-2)h at annealing temperature 450 ° C of thin films. From the resulted of the atomic force microscope (AFM), the surface roughness, medium square root (RMS) and average grain size increase with the increasing of the annealing time (0-2) h, at annealing temperature 450 ° C. The thin film with annealing time 2.5 h at annealing temperature 450 °C . We note a slight decrease in the values of the coefficients ( XRD and AFM) Due to the changes in the crystal structure of thin films and beginning of cracks and crystal defects generated on the surface of the thin film during the annealing process. It has been observed in practice that the increase in the annealing time to 3 h at annealing temperature 450 ° C. led to the separation of the thin film from the substrates.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.