Crystal structure imperfections in solids often act as efficient carrier trapping centres, which, when suitably isolated, act as sources of single photon emission. The best known examples of such attractive imperfections are well-width or composition fluctuations in semiconductor heterostructures (resulting in the formation of quantum dots) and coloured centres in wide-bandgap materials such as diamond. In the recently investigated thin films of layered compounds, the crystal imperfections may logically be expected to appear at the edges of commonly investigated few-layer flakes of these materials exfoliated on alien substrates. Here, we report comprehensive optical micro-spectroscopy studies of thin layers of tungsten diselenide (WSe2), a representative semiconducting dichalcogenide with a bandgap in the visible spectral range. At the edges of WSe2 flakes (transferred onto Si/SiO2 substrates) we discover centres that, at low temperatures, give rise to sharp emission lines (100 μeV linewidth). These narrow emission lines reveal the effect of photon antibunching, the unambiguous attribute of single photon emitters. The optical response of these emitters is inherently linked to the two-dimensional properties of the WSe2 monolayer, as they both give rise to luminescence in the same energy range, have nearly identical excitation spectra and have very similar, characteristically large Zeeman effects. With advances in the structural control of edge imperfections, thin films of WSe2 may provide added functionalities that are relevant for the domain of quantum optoelectronics.

We present optical spectroscopy (photoluminescence and reflectance) studies of thin layers of the transition metal dichalcogenide WSe2, with thickness ranging from mono- to tetra-layer and in the bulk limit. The investigated spectra show the evolution of excitonic resonances as a function of layer thickness, due to changes in the band structure and, importantly, due to modifications of the strength of Coulomb interactions as well. The observed temperature-activated energy shift and broadening of the fundamental direct exciton are well accounted for by standard formalisms used for conventional semiconductors. A large increase of the photoluminescence yield with temperature is observed in a WSe2 monolayer, indicating the existence of competing radiative channels. The observation of absorption-type resonances due to both neutral and charged excitons in the WSe2 monolayer is reported and the effect of the transfer of oscillator strength from charged to neutral excitons upon an increase of temperature is demonstrated.

We present low temperature magneto-photoluminescence experiments which demonstrate the brightening of dark excitons by an in-plane magnetic field B applied to monolayers of different semiconducting transition metal dichalcogenides. For both WSe2 and WS2 monolayers, the dark exciton emission is observed at ∼50 meV below the bright exciton peak and displays a characteristic doublet structure which intensity is growing with B 2 , while no magnetic field induced emission peaks appear for MoSe2 monolayer. Our experiments also show that the MoS2 monolayer has a dark exciton ground state with a dark-bright exciton splitting energy of ∼100

We present the micro-photoluminescence (µPL) and micro-reflectance contrast (µRC) spectroscopy studies on thin films of MoSe 2 with layer thicknesses ranging from a monolayer (1L) up to 5L. The thickness dependent evolution of the ground and excited state excitonic transitions taking place at various points of the Brillouin zone is determined. Temperature activated energy shifts and linewidth broadenings of the excitonic resonances in 1L, 2L and 3L flakes are accounted for by using standard formalisms previously developed for semiconductors. A peculiar shape of the optical response of the ground state (A) exciton in monolayer MoSe 2 is tentatively attributed to the appearance of Fano-type resonance. Rather trivial and clearly decaying PL spectra of monolayer MoSe 2 with temperature confirm that the ground state exciton in this material is optically bright in contrast to a dark exciton ground state in monolayer WSe 2 .

Abstract:Recent results on the optical properties of monolayer and few layers of semiconducting transition metal dichalcogenides are reviewed. Experimental observations are presented and discussed in the frame of existing models, highlighting the limits of our understanding in this emerging field of research. We first introduce the representative band structure of these systems and their interband optical transitions. The effect of an external magnetic field is then considered to discuss Zeeman spectroscopy and optical pumping experiments, both revealing phenomena related to the valley degree of freedom. Finally, we discuss the observation of single photon emitters in different types of layered materials, including wide band gap hexagonal boron nitride. While going through these topics, we try to focus on open questions and on experimental observations, which do not yet have a clear explanation.

By implementing four-wave mixing (FWM) microspectroscopy, we measure coherence and population dynamics of the exciton transitions in monolayers of MoSe2. We reveal their dephasing times T2 and radiative lifetime T1 in a subpicosecond (ps) range, approaching T2 = 2T1 and thus indicating radiatively limited dephasing at a temperature of 6 K. We elucidate the dephasing mechanisms by varying the temperature and by probing various locations on the flake exhibiting a different local disorder. At the nanosecond range, we observe the residual FWM produced by the incoherent excitons, which initially disperse toward the dark states but then relax back to the optically active states within the light cone. By introducing polarization-resolved excitation, we infer intervalley exciton dynamics, revealing an initial polarization degree of around 30%, constant during the initial subpicosecond decay, followed by the depolarization on a picosecond time scale. The FWM hyperspectral imaging reveals the doped and undoped areas of the sample, allowing us to investigate the neutral exciton, the charged one, or both transitions at the same time. In the latter, we observe the exciton–trion beating in the coherence evolution indicating their coherent coupling.

The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate the metal chalcogenide InSe, a recent addition to the family of vdW layered crystals, which transforms from a direct to an indirect band gap semiconductor as the number of layers is reduced. We investigate this direct-to-indirect bandgap crossover, demonstrate a highly tuneable optical response from the near infrared to the visible spectrum with decreasing layer thickness down to 2 layers, and report quantum dot-like optical emissions distributed over a wide range of energy. Our analysis also indicates that electron and exciton effective masses are weakly dependent on the layer thickness and are significantly smaller than in other vdW crystals. These properties are unprecedented within the large family of vdW crystals and demonstrate the potential of InSe for electronic and photonic technologies.

Using resonant Raman scattering spectroscopy with 25 different laser lines, we describe the Raman scattering spectra of mono-and multi-layers 2H-molybdenum diselenide (MoSe2) as well as the different resonances affecting the most pronounced features. For high-energy phonons, both A-and E-symmetry type phonons present resonances with A and B excitons of MoSe2 together with a marked increase of intensity when exciting at higher energy, close to the C exciton energy. We observe symmetry dependent exciton-phonon coupling affecting mainly the low-energy rigid layer phonon modes. The shear mode for multilayer displays a pronounced resonance with the C exciton while the breathing mode has an intensity that grows with the excitation laser energy, indicating a resonance with electronic excitations at energies higher than that of the C exciton.