highly specialized ink-jet printer that can print 1 μm dots with excellent alignment; [ 10 ] however, to contact single crystals that are randomly oriented would require too complex mapping and aligning methods. This complexity, in fi nding a suitable method to use single crystals in a simple fabrication process, is probably part of the reason that there is very little synthetic effort devoted to fi nding better crystal-forming molecular structures, not to mention their implementation in devices through a printing process.Here, we propose to arrive at highperformance materials by making the crystal-forming molecules relevant through the use of a dedicated transistor architecture that is designed to accommodate the features of the crystal-forming organic materials. In ref. [ 11 ] the authors developed a method for contacting nanowires that is based on forming highly dense and aligned nanowires such that the deposition of the contacts did not need to be aligned to a single nanowire. However, aligning the nanowires was a must and to capture nanowires between source and drain electrodes it was required to maintain few microns resolution, which was achieved through photolithography. Here we report a transistor architecture where the fabrication of the source and drain contacts and the contacting of the crystals are implemented separately. This introduces another degree of freedom in the device design which can be used to easily accommodate organic crystals in an FET structure. After discussing the new transistor structure and its mode of operation we demonstrate its high performance. We fi rst demonstrate a P-type transistor having a 100 μm channel length which is based on multiple, primarily isolated and randomly oriented, single crystals having the size of ≈10 μm. We fi nd that the transistors' effective mobility is at least 50% of that found for a single crystal. We then move to showing the generality of the structure by demonstrating also N-type and varying crystallites morphologies. Results and Discussion The Statistical FETThe concept of the statistical FET (SFET) structure is shown in Figure 1 a-c, which also illustrates the specifi c implementation process adapted here. Figure 1 a shows a top view of the gate and gate dielectric onto which many crystallites were deposited at a number density such that they form a discontinuous polycrystalline layer.