In this study, two finite-difference time-domain algorithms are proposed for time domain analysis of the lossy nonuniform composite right/left-handed transmission line (CRLH TL). The results of the proposed algorithm are confirmed with those of the ADS commercial software. The numerical stability of the proposed algorithms is studied and a closed form formula for maximum temporal step size that guarantees algorithm stability is extracted. Finally, a new algorithm for timedomain analysis of the non-linear CRLH TLs using finite-difference time-domain is proposed. This algorithm does not impose any limitation on type of non-linearity. The results of the proposed algorithm have a good agreement with the results of the ADS commercial software.

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A compact substrate integrated waveguide (SIW) with open complementary split‐ring resonators (OCSRRs) loaded on the waveguide surface is proposed. The OCSRRs can be interpreted in terms of electric dipoles and they are good candidates to behave as electric scatterers. By loading OCSRRs on the waveguide surface, a forward‐wave pass‐band propagating below the waveguide cutoff frequency is generated. The resonance frequency of the OCSRRs is approximately half of the resonance frequency of the complementary split ring resonator (CSRR). Therefore, the electrical size of this particle is larger than the CSRRs and the OCSRRs are more appropriate for the SIW miniaturization. A bandpass response with a sharp rejection frequency band is obtained by properly manipulating the structure of the elements. By changing the orientation of the OCSRRs, two types of unit cell are proposed. Moreover, by resizing the OCSRRs, resonance frequency can be easily moved and the bandwidth can be tuned by the coupling between two OCSRRs. Compared with some other reported bandpass filters (BPFs) with SIW technique, the presented BPF has great improvements on size reduction and selectivity. To verify the methodology, two filters with center frequency of 5.5 GHz are designed and measured. The measured results are in good agreement with the simulated ones. © 2016 Wiley Periodicals, Inc. Int J RF and Microwave CAE 26:674–682, 2016.

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Abstract-In this paper, an accurate modeling procedure for GaAs MESFET as active coupled transmission line is presented. This model can consider the effect of wave propagation along the device electrodes. In this modeling technique the active multiconductor transmission line (AMTL) equations are obtained, which satisfy the TEM wave propagation along the GaAs MESFET electrodes. This modeling procedure is applied to a GaAs MESFETs by solving the AMTL equations using Finite-Difference Time-Domain (FDTD) technique. The scattering parameters are computed from time domain results over a frequency range of 20-220 GHz. This model investigates the effect of wave propagation along the transistor more accurate than the slice model, especially at high frequencies.