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Printed, organic diodes with a thin organic interfacial layer forming a Schottky barrier were fabricated and characterized. Experiments indicated that the thickness of the barrier layer is <10 nm. The interfacial layer reduces the reverse current of the diode by 2 orders of magnitude without significantly affecting the forward characteristics above 1 V. As a result, printed organic diodes with a rectification ratio of 5 orders of magnitude were fabricated. The diodes enable applications where low reverse currents are needed.

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