The van der Waals heterojunctions of 2D materials offer tremendous opportunities in designing and investigating multifunctional and high-performance electronic and optoelectronic devices. In this study, a vertical p-n diode is constructed by vertically stacking p-type few-layer black phosphorus (BP) on n-type few-layer indium selenide (InSe). The photodetector based on the heterojunction displays a broadband and gate-modulated photoresponse under illumination. More importantly, by taking advantage of the strong linear dichroism of BP, the device demonstrates a highly polarization-sensitive photocurrent with an anisotropy ratio as high as 0.83. Additionally, the device can function in a zero-bias photovoltaic mode, enabling a fast photoresponse and low dark current. The external quantum efficiency can reach ≈3%, which is impressive for BP-based devices. The results pave the way for the implementation of p-BP/n-InSe heterostructure as a promising candidate for future multifunctional optoelectronics and, especially, polarization-sensitive applications.

High-sensitivity and visible-blind ultraviolet (UV) photoconductive detectors based on SrTiO(3) single crystal with interdigitated electrodes are reported. The responsivities of photovoltage and photocurrent can reach 2.13x10(5) V/W and 213 mA/W, respectively, at 330 nm at ambient temperature, and the corresponding quantum efficiency eta reaches 80.2%. The dark current is lower than 50 pA at 10 V bias, and the UV/visible contrast ratio is about four orders of magnitude with a sharp cutoff at 390 nm. The experimental results demonstrate that SrTiO(3) single crystal has potentially wide applications in UV detection.

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