We demonstrate statistically significant data for specific contact resistivity (ρ c ) of sub-10 -8 Ω-cm 2 and sub-2x10 -8 Ω-cm 2 for N-type and P-type Si respectively on 300mm wafer by introducing ultra-thin ALD high-k dielectric layer(s) between the metal and Si. A 6-terminal Cross-Bridge Kelvin (6T-CBK) structure was used for the extraction to achieve excellent resolution in this small ρ c range. With the help of
measurements from multiple dielectric stacks and NonEquilibrium Green's Function (NEGF) based quantum transport calculations, we clearly show that the suppression of evanescent metal induced gap states (MIGS) and formationof interface dipole play significant role to reduce the ρ c as long as the tunneling resistance of the dielectric stack is small. Finally, transient response, break down mechanism and technology benchmarking are discussed which show promise for sub-14nm node applications.
A new conformal and damage free doping technique (monolayer doping, MLD) has been demonstrated on FinFETs with good control of short channel effects down to a gate length of �40nm and 20nm of Wfin. Unlike conventional ion-implantation, this approach makes use of a dopant-containing precursor to uniformly assemble a monolayer of covalently bonded dopants to enable ultra shallow junction (USJ) of �5nm, showing great potential for FinFET junction scaling. This low damage, conformal doping technique is promising to address key FinFET scaling issues: series resistance and short channel control for 14nm node and beyond. A sub-5nm junction depth with a steep junction abruptness has been successfully achieved on 300mm platform.
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