The kinetics of charge carriers in bilateral macroporous silicon with macroporous layers of equal thicknesses is calculated by the finite difference method. A diffusion equation for a monocrystalline substrate and macroporous layers is solved. The boundary conditions are defined at the boundaries between the monocrystalline substrate and the macroporous silicon layers on both sides. Stationary distribution of excess charge carriers in the bilateral macroporous silicon with the macroporous layers of equal thicknesses calculated by the finite difference method is set as the initial condition. Under stationary conditions, excess charge carriers are generated by light with the wavelengths of 0.95 µm and 1.05 µm. It is shown that at the counting times much longer than the relaxation time, all the distributions of the concentration of excess minority carriers generated by light with any wavelength approach the same distribution with exponentially decreasing value.
The out-of-plane optical properties of a combined one-two-dimensional comb-type photonic structure based on macroporous silicon under illumination with polarized normally incident light have been experimentally investigated. Technologically simple quasi-periodic structure with parallel air grooves in the form of mutually overlapping macropores (i.e., one-dimensional air/Si type structure) together with macropores arbitrarily distributed over the crystal surface (two-dimensional air/Si structure) was studied in comparison with the calculated one-dimensional periodic metal lattice on silicon. It is shown that this combined air/Si photonic structure has significant polarization selectivity and can serve as a basis for developing the full-function out-of-plane thermal photodetector on macroporous silicon.
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