In this work, the pulse electrodeposition technique has been employed for the first time to deposit SnSe films from a bath containing Analar grade 50 mM tin chloride (SnCl 4 ) and 5 mM SeO 2 . The XRD profile of SnSe thin films deposited at different duty cycles indicate the peaks corresponding to SnSe. Atomic force microscopy studies indicated that the surface roughness increased from 0.5 to 1.5 nm with duty cycle. The transmission spectra exhibited interference fringes. The value of refractive index at 780 nm was 2.1, this value decreased to 1.95 with decrease of duty cycle. The room temperature resistivity increased from 0.1 to 10 Xcm with decrease of duty cycle. Photo electrochemical cell studies were made using the films deposited at different duty cycles. For duty cycles greater than 15% photo output was observed. For a film deposited at 50% duty cycle, an open circuit voltage of 0.55 V and a short circuit current density of 5.0 mA cm -2 at 60 mW cm -2 illumination. Capacitance voltage measurements indicated V fb = 0.67 V (SCE) and p type, carrier density = 6.98 9 10 16 cm -3 .
In this work, the pulse electrode position technique has been emeployed for the first time to deposit SnSe films. SnSe films were deposited by the pulse electrodeposition technique at room temperature from a bath containing Analar grade 50 mM tin chloride (SnCI4) and 5 mM Se02. The deposition potential was maintained as -0.9V (SCE). Tin oxide coated glass substrates (5.0 ohmsl sq) was used as the substrate. The duty cycle was varied in the range of 6 -50 %. The XRD profile of SnSe thin films deposited at different duty cycles indicate the peaks corresponding to SnSe. Atomic force microscopy studies indicated that the surface roughness increased from 0.5 nm to 1.5 nm. The transmission spectra exhibited interference fringes. The value of refractive index at 780 nm was 2.1, this value decreased to 1.95 with decrease of duty cycle. The room temperature resistivity increased from 0.1 ohm cm to 10 ohm cm with decrease of duty cycle. Photoelectrochemical cell studies were made using the films deposited at different duty cycles. For duty cycles greater than 15 % photo output was observed. For a film deposited at 50 % duty cycle, an open circuit voltage of 0.55 V and a short circuit current density of 5.0 rnA cm-2 at 60 mW cm-2 illumination. Capacitance voltage measurements indicated Vfb = 0.67 V (SCE) and p type, carrier density = 6.98 x 10161 cm3.The IV-VI compounds, tin selenide (SnSe) has received considerable attention due to its applications in a variety of devices. SnSe thin films have been deposited by different methods like vacuum evaporation [1], flash evaporation [2], hot wall epitaxy [3], reactive evaporation [4], electrodeposition [5], laser ablation [6], chemical bath deposition (CBD) [7] and electrochemical atomic layer epitaxy (ECALE) [8] to study various physical properties. The decisive requirements for the efficient performance of the devices are compositional uniformity and crystallinity. Further, the technique adopted should be simple and cost effective. Every technique has associated with it, its own merits and demerits. In this investigation, SnSe films were deposited for the first time using the pulse electrodeposition technique. 978-1-4673-0074-2/11/$26.00 @2011 IEEE 232 II.EXPERIMENT AL METHODS SnSe films were deposited by the pulse electrodepsoition technique at room temperature from a bath containing Analar grade 50 mM tin chloride (SnCI4) and 5 ruM SeOz. The deposition potential was maintained as -0.9V (SCE). Tin oxide coated glass substrates (5.0 ohms/ sq) was used as the substrate. The duty cycle was varied in the range of 6 -50 %. Thickness of the films measured by surface profilometer increased from 500 nm to 1000 nm as the duty cycle increased from 6 % to 50 %. Structural, optical, electrical and photoelectrochemical (PEC) properties of the films were studied. For PEC studies 1M polysulphide was used as the redox electrolyte. III. RESULTS AND DISCUSSIONThe XRD patterns of SnSe thin films (Fig. 1 ), deposited at different duty cycles indicate the peaks around 2e = 30° corresponding to (111...
CdS films were pulse at different duty cycles in the range 6 - 50 % using AR grade cadmium sulphate and sodium thiosulphate precursors. The as deposited films exhibited cubic structure. Optical band gap of the films increased with decrease of duty cycle. XPS, EDAX and AES studies confirmed the formation of CdS. Laser Raman studies indicated LO and TO phonons of CdS. Photoluminescence spectra of the films indicated broad bands at 2.30 eV and 1.80 eV corresponding to interband transitions and sulphur vacancies. Mott- Schottky studies indicated a flat band potential of -1.10V(SCE) and a carrier density of 2.0 x 1017 cm-3.
CdSe films(1cm 2 area) were deposited on titanium and conducting glass substrates at 50 % duty cycle and at different deposition temperatures in the range of 30 -80°C. The deposition current density was maintained constant at 100 mA cm -2 . . The prominent peaks corresponding to (the hexagonal phase are observed in all cases. The crystallite size increased with deposition temperature. The cross plane resistivity was found to increase from 20 to 60 Ω cm with increase of substrate temperature. Photoelectrodes with high efficiency were obtained.
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