Preparation of SnN x ®lms has been studied by atmospheric pressure chemical vapor deposition using SnCl 2 and NH 3 as starting materials. The ®lms were deposited onto a quartz substrate at 550±675 ³C with growth rates of 0.1±2.5 mm h 21 . They showed a typical X-ray diffraction pattern for SnN x with a hexagonal structure. The band-gap was estimated to be 2.05 eV from the transmission spectra. The electron probe X-ray microanalysis showed that the N/Sn ratio of the as-deposited ®lms was 0.73±1.10, which was dependent upon the growth temperature. They were conductive with resistivities of 0.3±10 V cm. The electrochromism was observed when ¡1.0 V (SCE) potentials were applied to the SnN x ®lms in a 1.0 M Na 2 SO 4 electrolyte solution.
Optical response of tin nitride (SnN x ) films, which were deposited onto quartz substrates by means of atmospheric pressure, halide chemical vapor deposition (AP-HCVD), were examined by pulsed irradiation of a YAG laser (532 nm). It was observed that the transmittance of a light of a He-Ne laser (633 nm) through the SnN x film decreases after the film is irradiated with a YAG laser. The atomic force microscopy (AFM) micrograph observation confirmed that spot-like humps appeared on the SnN x film surface in the regions spotted by the YAG laser. This phenomenon was explained in terms of the laser-assisted thermal decomposition of SnN x to -tin.
Preparation of green-emitting SrGa2S4:Eu thin film phosphors by low temperature process at lower than 600oC under an assist with a laser annealing technique after the deposition was investigated. It was shown that the crystallinity and emission intensity of the SrGa2S4:Eu film annealed at 500oC were improved considerably by the assist with laser annealing using KrF excimer laser. As a result, the film showed cathodoluminescent (CL) luminance of about 2,000 cd/m2 under excitation with 5kV and 60uA/cm2. It was found from these results indicate that the laser annealing technique assists the improvement of both structural and luminescent properties.
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