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Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) characteristics were investigated in a Co 2 MnSi (CMS)/Ag/CMS fully epitaxial device and compared to those in a CMS/Cr/CMS device systematically. Reflection high-energy electron diffraction and transmission electron microscopy images showed the two samples had no remarkable differences and little interdiffusion. The large spinasymmetry of electron scattering was found at the CMS/Ag inteface compared with that at the CMS/Cr interface. Finally, the largest magneto-resistance (MR) ratio of 28.8% was observed at room temperature in the CMS/Ag/CMS CPP-GMR device.

Fully epitaxial Co 2 Fe x Mn 1Àx Si(CFMS)/Ag/Co 2 Fe x Mn 1Àx Si current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses t CFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x ¼ 0.4 and t CFMS ¼ 3 nm. Enhancement of interface spinasymmetry was suggested for x ¼ 0.4 compared with that at x ¼ 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives. V

Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) of the multilayer thin film using a full-Heusler Co2MnSi (CMS) phase as ferromagnetic electrodes has been investigated. A multilayer of Cr buffer (10nm)∕CMS (50nm)∕Cr spacer (3nm)∕CMS (10nm)∕Cr cap (3nm) was grown on a MgO(100) substrate. The 50nm thick CMS layer which was deposited on the Cr buffer at 573K was epitaxially grown and had an L21 structure. The resistance change-area product (ΔRA) at room temperature was 19mΩμm2, which is one order of magnitude larger than those in previously reported trilayer systems, resulting in the MR ratio of 2.4%. A possible origin of the enhanced ΔRA is considered to be the large spin polarization in a high-quality L21 CMS film.

Sum frequency generation (SFG) spectroscopy is widely used to observe molecular orientation at interfaces through a combination of various types of polarization. The present work thoroughly examines the relation between the polarization dependence of SFG signals and the molecular orientation, by comparing SFG measurements and molecular dynamics (MD) simulations of acetonitrile/water solutions. The present SFG experiment and MD simulations yield quite consistent results on the ratios of χ elements, supporting the reliability of both means. However, the subsequent polarization analysis tends to derive more upright tilt angles of acetonitrile than the direct MD calculations. The reasons for discrepancy are examined in terms of three issues; (i) anisotropy of the Raman tensor, (ii) cross-correlation, and (iii) orientational distribution. The analysis revealed that the issues (i) and (iii) are the main causes of errors in the conventional polarization analysis of SFG spectra. In methyl CH stretching, the anisotropy of Raman tensor cannot be estimated from the simple bond polarizability model. The neglect of the orientational distribution is shown to systematically underestimate the tilt angle of acetonitrile. Further refined use of polarization analysis in collaboration with MD simulations should be proposed.

During mammalian neocortical development, neural precursor cells generate neurons first and astrocytes later. The cell fate switch from neurons to astrocytes is a key process generating proper numbers of neurons and astrocytes. Although the intracellular mechanisms regulating this cell fate switch have been well characterized, extracellular regulators are still largely unknown. Here, we uncovered that fibroblast growth factor (FGF) regulates the cell fate switch from neurons to astrocytes in the developing cerebral cortex using mice of both sexes. We found that the FGF signaling pathway is activated in radial glial cells of the ventricular zone at time points corresponding to the switch in cell fate. Our loss-and gain-of-function studies using in utero electroporation indicate that activation of FGF signaling is necessary and sufficient to change cell fates from neurons to astrocytes. We further found that the FGF-induced neuron-astrocyte cell fate switch is mediated by the MAPK pathway. These results indicate that FGF is a critical extracellular regulator of the cell fate switch from neurons to astrocytes in the mammalian cerebral cortex.Although the intracellular mechanisms regulating the neuron-astrocyte cell fate switch in the mammalian cerebral cortex during development have been well studied, their upstream extracellular regulators remain unknown. By using in utero electroporation, our study provides in vivo data showing that activation of FGF signaling is necessary and sufficient for changing cell fates from neurons to astrocytes. Manipulation of FGF signaling activity led to drastic changes in the numbers of neurons and astrocytes. These results indicate that FGF is a key extracellular regulator determining the numbers of neurons and astrocytes in the mammalian cerebral cortex, and is indispensable for the establishment of appropriate neural circuitry.

Co 2 MnSi / Cr / Co 2 MnSi (001)-fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices were fabricated via an UHV magnetron sputtering system. The relationship between the degree of chemical ordering in Co2MnSi (CMS) and the CPP-GMR characteristics was investigated systematically against the annealing temperature of the devices. X-ray diffraction profiles and reflection high-energy electron diffraction images indicated that annealing improved L21-ordering. The MR ratio also increased upon annealing and the maximum MR ratio of 5.2% and ΔRA of 6.5 mΩ μm2 were achieved by annealing at 400 °C. These results indicate that promoting the degree of L21-ordering in CMS enhances the bulk and/or interface spin-asymmetry coefficients.