Energy band offsets of SnS-based solar cell structure using various n-type semiconductors, such as CdS, SnS2, In2S3, ZnIn2Se4, ZnO, and Mg0.3In0.7O, are evaluated by photoelectron yield spectroscopy. The valence band discontinuities are estimated to be 1.6 eV for both SnS/CdS and SnS/SnS2, 0.9 eV for SnS/In2S3, 1.7 eV for SnS/ZnIn2Se4, and 1.8 eV for both SnS/ZnO and SnS/Mg0.3Zn0.7O. Using the valence band discontinuity values and the corresponding energy bandgaps of the layers, energy band diagrams are developed. This study implied a type-I heterostructure, appropriate for SnS-based solar cell, for the ZnIn2Se4 or MgxZn1−xO (0 ≤ x ≤ 0.3) interface and type-II for other junctions.
Tin sulphide is considered to be a potential candidate for the development of low cost polycrystalline thin film solar cells. The advantages of using sulfurization process to grow SnS films were demonstrated. Polycrystalline p-type SnS films were obtained by a simple dry process at 300 °C for 90 min. The sulfurization condition depends on the deposition method of the Sn precursor. Using single-phase SnS films, band discontinuities at SnS/CdS and SnO2/SnS heterointerfaces were measured by X-ray photoelectron spectroscopy. The valence band offsets were determined to be approximately 1.5 eV for SnS/CdS and 3.5 eV for SnO2/SnS interfaces. Using these values and the energy band gaps of the corresponding layers, the energy band diagram was developed. It indicated that the SnS/CdS heterojunction is of TYPE-II form of heterostructure. This result indicated that SnS-related solar cells with CdS as window layer do not have an ideal band structure that could give high conversion efficiency.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.