Studies on the Energy Band Discontinuities in SnS/ZnMgO Thin Film Heterojunction

Reddy, K.T. Ramakrishna; Ramya, K; Gedi, Sreedevi; Shimizu, Tomoe; Murata, Yoshihisa; Sugiyama, Mutsumi

doi:10.1016/j.egypro.2011.10.172

Cited by 21 publications

(4 citation statements)

References 8 publications

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“…The energy band diagrams estimated for the different heterostructures fabricated in this work and for those of heterostructures previously developed from other n-type layers (conventional CdS and Mg 0.2 Zn 0.8 O) examined by XPS [25][26][27] are summarized in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

Experimental determination of band offsets of NiO-based thin film heterojunctions

Kawade

Chichibu

Sugiyama

2014

Journal of Applied Physics

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The energy band diagrams of NiO-based solar cell structures that use various n-type oxide semiconductors such as ZnO, Mg 0.3 Zn 0.7 O, Zn 0.5 Sn 0.5 O, In 2 O 3 :Sn (ITO), SnO 2 , and TiO 2 were evaluated by photoelectron yield spectroscopy. The valence band discontinuities were estimated to be 1.6 eV for ZnO/NiO and Mg 0.3 Zn 0.7 O/NiO, 1.7 eV for Zn 0.5 Sn 0.5 O/NiO and ITO/NiO, and 1.8 eV for SnO 2 /NiO and TiO 2 /NiO heterojunctions. By using the valence band discontinuity values and corresponding energy bandgaps of the layers, energy band diagrams were developed. Judging from the band diagram, an appropriate solar cell consisting of p-type NiO and n-type ZnO layers was deposited on ITO, and a slight but noticeable photovoltaic effect was obtained with an open circuit voltage (V oc ) of 0.96 V, short circuit current density (J sc ) of 2.2 lA/cm 2 , and fill factor of 0.44. V C 2014 AIP Publishing LLC. [http://dx.

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Section: Resultsmentioning

confidence: 99%

Experimental determination of band offsets of NiO-based thin film heterojunctions

Kawade

Chichibu

Sugiyama

2014

Journal of Applied Physics

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“…2 Such low efficiencies were attributed to factors like poor quality of the films, grain boundaries, lower thickness employed, insufficient diffusion lengths in the layers and large band discontinuities. [3][4][5][6] Hence, in order to obtain better efficiencies in SnS based solar cells the quality of the SnS layers need to be substantially improved.…”

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confidence: 99%

Pulsed Electrodeposition of Tin Sulfide Thin Films from Dimethyl Sulfoxide Solutions

Burgos

Cataño

Marı́

et al. 2016

J. Electrochem. Soc.

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SnS thin films were prepared on molybdenum covered glass substrates by pulsed electrodeposition. The structure, morphology and composition were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and Raman spectroscopy. Highly compact, dense, homogenous and almost stoichiometric films were obtained by properly selecting the electrodeposition parameters. Capacitance-voltage measurements showed that the films are p-type presenting cathodic photocurrent under visible light illumination at a bias potential close to the flatband potential.

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“…Although numerous SnS solar cells with different buffer layers have been fabricated, band alignment studies have only been reported for CdS, 16,19 SnO 2 , 16 and ZnMgO. 20 Zinc oxysulfide (Zn(O,S)) is an excellent candidate for a wide band gap buffer layer because its constituent elements can be tuned to give any composition ranging between ZnO and ZnS, hence forming a favorable CBO with various absorber layers. [21][22][23][24][25] The authors have reported SnS/Zn(O,S) thin film solar cells with a record high total area conversion efficiency of 2.04% certified by the National Renewable Energy Laboratory (NREL).…”

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confidence: 99%

Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells

Sun

Haight²,

Sinsermsuksakul

et al. 2013

Appl. Phys. Lett.

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Studies on the Energy Band Discontinuities in SnS/ZnMgO Thin Film Heterojunction

Cited by 21 publications

References 8 publications

Experimental determination of band offsets of NiO-based thin film heterojunctions

Experimental determination of band offsets of NiO-based thin film heterojunctions

Pulsed Electrodeposition of Tin Sulfide Thin Films from Dimethyl Sulfoxide Solutions

Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells

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