Single-domain growth of a GaAs layer showing a relatively good crystal structure and specular surface has been demonstrated on a silicon substrate which has been cut along an exact (100) plane. The substrate was patterned with a sawtooth grating using electron beam lithography, and the layers were grown by molecular beam epitaxy.
By ion implantation of non-doping ions on the backside of Si wafers thebehaviour of the frontside may be altered after a subsequent high-temperature process. Known a r e effects on defect formation, electrical parameters of the Si-Si02 interface, and also the lifetime of minority c a r r i e r s /1 to 4/, which a r e usually
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