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The controlled imprinting of surfaces with specified patterns is important in the development of nanoscale devices. Previously, such patterns were created using self-assembled physisorbed adsorbate molecules that can be stabilized on the surface by subsequent chemical bonding. Here we show a first step towards use of the bonding within a surface to propagate reactions for patterning, namely the cooperative reaction of adjacent silicon atoms. We exploit the double-bonded silicon dimer pairs present on the surface of Si(100)-2×1 and show that the halogenation of one silicon atom (induced by electrons or heat) results in cooperative halogenation of the neighbouring silicon atom with unit efficiency. The reactants used were two 1-halopentane molecules physisorbed over a pair of silicon atoms. This cooperative pair of halogenation reactions was shown by ab initio calculation to be sequential on a timescale of femtoseconds.

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One-dimensional nanostructures at silicon surfaces have potential applications in nanoscale devices. Here we propose a mechanism of dipole-directed assembly for the growth of lines of physisorbed dipolar molecules. The adsorbate chosen was a halide, in preparation for the patterned imprinting of halogen atoms. Using scanning tunnelling microscopy, physisorbed 1,5-dichloropentane on Si(100)-2x1 was shown to self-assemble at room temperature into molecular lines that grew predominantly perpendicular to the Si-dimer rows. Line formation was triggered by the displacement of surface charge by the dipolar adsorbate. Experimental and simulated scanning tunnelling microscopy images were in agreement for a range of positive and negative bias voltages. The geometry of the physisorbed molecules and nature of their binding were evident from the scanning tunnelling microscopy images, as interpreted by scanning tunnelling microscopy simulation.

Core-level binding energies of the component metals in bimetallic clusters of various compositions in the Ni-Cu, Au-Ag, Ni-Pd, and Cu-Pd systems have been measured as functions of coverage or cluster size, after having characterized the clusters with respect to sizes and compositions. The core-level binding energy shifts, relative to the bulk metals, at large coverages or cluster size, ∆E a , are found to be identical to those of bulk alloys. By substracting the ∆E a values from the observed binding energy shifts, ∆E, we obtain the shifts, ∆E c , due to cluster size. The ∆E c values in all the alloy systems increase with the decrease in cluster size. These results establish the additivity of the binding energy shifts due to alloying and cluster size effects in bimetallic clusters.