Measurements of pinning forces due to statistically distributed vacancies and interstitials (Frenkel pairs) in niobium are reported. The defects were produced by low temperature 3 MeV electron irradiation. The results indicate that fluctuations in the defect density and not the interaction between a single point defect and a flux line are responsible for the observed pinning effects.
Es wird iiber Messung von Verankerungskrgften auf FluSlinien in Niob berichtet. DieVerankerungskriifte werden durch statistisch verteilte Frenkelpaare verursacht, die diirch eine 3 MeV-Elektronenbestrahlung bei tiefer Temperatur erzeugt wurden. Die Resultate zeigen, daB nicht die Wechselwirkung zwischen einem einzelnen Punktdefekt und einer FluBlinie, sondern Fluktoationen in der Defektdichte fur die beobachtete FluBlinienverankernng verantwortlich sind. l) Guest from Electrotechnical Institute, Slovak Academy of Sciences, Bratislava. Czechoslovakia.
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