Nano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.
The Zinc oxide thin films were produced on glass substrate by using SILAR and CBD methods. The structural, optical and morphological properties of the films were investigated by X- Ray diffractometer, UV-visible spectrometer and scanning electron microscopy respectively. The XRD pattern shows that in both the samples preferential growth orientation is along (0 0 2) plane. The optical band gap was found to be 3.31eV for SILAR ample and 3.18eV for CBD grown sample. The morphology analysis shows that the particle size in SILAR grown sample was high. A vertically aligned nanorods were obtained in CBD grown sample.
Zinc sulphide thin films have been deposited on glass substrate using simple low cost chemical bath deposition method at 80°C for 2 hours. One of the samples is post irradiated with infrared radiation for one hour. Structural, optical and morphological studies were done for both samples and the results were compared. XRD pattern of the IR irradiated sample shows enhanced crystallinity. Optical band gap was found to be 3.31eV for pure ZnS and 3.93 eV for the IR irradiated ZnS thin film. The films prepared by using this facile method are suitable for optoelectronic applications.
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