Radiation effects on InP -based electrical and optical devices are discussed from the standpoint of device structure and physics. The devices addressed are High Electron Mobility Transistor (HEMT), Heterojunction Bipolar Transistor (HBT), and solar cells.Radiation effects due to neutrons, gamma rays, electrons, protons, x rays, and total dose radiation can result in device parameter degradation, upset, burnout, and current leakage problems. The effects are correlated to device structure and material properties. Comparisons are made to GaAs or Si devices that have performance characteristics similar to the above -mentioned InP devices. Finally, recommendations are made for testing and modeling these effects.
The separated source-to-substrate/well contact diffusion layout commonly used in CMOS IC design has been identified as a primary cause for latch-up sensivity in bulk CMOS devices. FXR testing as well as electrical characterization of latch-up has been conducted on test structures which separately contain either separated or butted sourceto-substrate/well layout. SPICE simulations using device parameters derived from the PISCES code have been performed to confirm the experimental results. Reduced substrate resistances and field degraded vertical transistor gains seem to be the reasons for high latch-up immunity of the butted layout. Latch-up free bulk CMOS ICs can be fabricated using the butted layout design rules, which can eliminate costly hardness assurance measures such as 100 'lo screening.
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