-AlzCu thin fti (-382 nm) are fabricated by melting and resolidi~ing A1/Cubilayers in the presence of a -3 nm A1203 passivating layer. X-ray Photoelectron Spectroscopy (XPS) measures a 1.0 eV shift of the Cu2p3i2 peak and a 1.6 eV shift of the valance band relative to metallic Cu upon AlzCu formation. Scanning Electron Microscopy (SEM) and Electron BackScattered Diffraction (EBSD) show that the AlzCu film is composed of 30-70pm wide and 10-25 mm long cellular grains with (110) orientation. The atomic composition of the fti as estimated by Energy Dispersive Spectroscopy (EDS) is 67k2% Al and 33fl% Cu.XPS scans of Alz03/A12CUtaken before and after air exposure indicate that the upper A12Culayers undergo further oxidation to A1203 even in the presence of -5 nm A1203. The majority of Cu produced from oxidation is believed to migrate below the A1203layers, based upon the lack of evidence for metallic Cu in the XPS scans. In contrast to A1./Cu passivated with A1203, meltinghesolidifying the A1/Cu-bilayer without A1203 results in phasesegragated dendritic fdm growth.
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