No abstract

As a first step toward an understanding of the chemical and structural role of hydrogen in hydrogenated amorphous silicon, we utilized electron beam evaporation in an ultra high vacuum environment to deposit films of amorphous silicon and systematically dosed these films with atomic hydrogen during deposition. Secondary Ion Mass Spectroscopy (SIMS) data indicated that hydrogen concentration can be varied from the detection limit of SIMS to a value in excess of 1021 atoms cm-3. The intentional addition of hydrogen caused the concentration to fall from in an excess of 1021 atoms*cm-3 to below 1018 atoms*cm-3.