Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor depositionObservations of gas-phase nanoparticles during InGaN metal-organic chemical vapor deposition Appl. Phys. Lett. 93, 171906 (2008); 10.1063/1.3009291Ductile relaxation in cracked metal-organic chemical-vapor-deposition-grown AlGaN films on GaN
We developed a formation method of platinum (Pt) nanoparticles by the metal-organic chemical fluid deposition (MOCFD) employing supercritical fluid (SCF), and demonstrate the synthesis of dispersed Pt nanoparticles on the surface of aligned carbon nanotubes and carbon nanowalls, two-dimensional carbon nanostructures standing vertically on the substrate. By using the SCF-MOCFD employing a supercritical carbon dioxide as a solvent of metal-organic compound ((methylcyclopentadienyl)trimethyl platinum: MeCpPtMe3), highly dispersed Pt nanoparticles of 2 nm size were deposited on the entire surface of carbon nanotubes and carbon nanowalls. The formation of Pt nanoparticles on the surface of carbon nanostructures occurred at relatively low temperatures above 120 degrees C. Furthermore, the number density of Pt nanoparticles increased with the increase of temperature.
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