Ferroelectric PbTiO3 films were deposited by ion-beam-assisted deposition (O2+Ar 75–150 eV). The effects of ion bombardment on the Pb/Ti ratio and the structures of the film are discussed. For a given target-substrate distance and substrate temperature, the Pb/Ti ratio decreased with increasing bombarding beam energy. Compared with the films deposited without ion bombardment, the deposition rate was increased under ion bombardment, which is attributed to an increase in the surface reaction rate. The crystal grains are larger for films deposited under ion bombardment, which implies that ion bombardment enhances the surface mobility of adatoms and hence the growth kinetics of the growing films. Dielectric and ferroelectric properties of the as-deposited films are also reported.
Epitaxial BiFe 0.95 Mn 0.05 O 3 (BFMO) film with room-temperature switching properties is prepared on SrTiO 3 (STO) substrate with a SrRuO 3 (SRO) buffer layer by sol–gel method coupled with rapid thermal annealing (RTA). The remnant polarization and coercive field of SRO/BFMO/SRO capacitor, measured at 455 kV/cm, are 51.8 μC/cm2 and 153.5 kV/cm, respectively. Besides the good fatigue resistance and retention characteristics, the relatively small leakage current density of the capacitor is mainly attributed to the suppression of oxygen vacancies resulting from RTA. Moreover, the SRO/BFMO/SRO capacitor satisfies the Ohmic conduction behavior at fields lower than 90 kV/cm, and the Schottky emission at fields higher than 90 kV/cm.
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