The depths of the peaks of damage distributions produced by implantation of 50-1100 keV 4He+ ions into Y-cut single-crystal LiNbO3 have been determined using proton channelling. These values are about 20% lower than those deduced from optical measurements reported in the literature. This information is required for the design of integrated optical devices in LiNbO3 produced by 4He+ ion implantation.
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