The interface between yttria-stabilized zirc~nia (YSZ) substrate and YBazCu107 (YBCO) film was studied by high-resolution electron microscopy. In all specimens we have observed an intermediated layer of BaZQ located between the substrate YSZ and YBCO. The BaZrO, layer is composed of almost equally aligned domains being 4-8 nm in the lateral directions. Reaction products such as Y and Cu oxides were never observed in or close to the BaZrQ reaction layer but they do occur in the YBCO film.
Abstra&Electricfield effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-T, materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements.
Epitaxial multilayers, consisting of a PrBa2Cu307_ x buffer layer, ultrathin YBa2Cu307_ x and SrTiO 3, have been grown for application in electric field effect devices. Different analytical techniques indicate a sharp interface between the layers and good dielectric properties of the SrTiO3-1ayer. First measurements show clear modification of the superconductor's current-voltage characteristics upon applying electric fields of 0.1-1 MV/cm.
The supereurrent I s of a YBCO bridge can be modulated by the quasipartiele-injection current I a from YBCO/Au or YBCO/PBCO/Aujunctions. The behavior of these structures is determined by two effects: 1) summation of the currents I s and I o in the YBCO bridge; 2) nonequilibrium suppression of the supercurrent I s by the quasiparticle-injection. The current gain coefficient &Is/AI o increases linearly with decreasing temperature, reaching a value of 1.5 for YBCO/Au structures at 65 K. The nature of the nonequilibrium state and the effectiveness of the PBCO barrier layer for the formation of the quasiparticles are analyzed.
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