An optically pumped surface-normal optical amplifier with a 100-period InGaAs/InGaAlAs multiple quantum well is fabricated, and a signal gain exceeding 2 dB is observed for what we believe to be the first time. A laser diode with the wavelength lambda of 1.45 microm is used for pumping. An optical single-pass gain as high as 2.4 dB is obtained at lambda = 1.585 microm with 65-mW pumping (spot diameter 12 microm).
The silicon (Si) or boron (B) implantation process in
Ga0.8In0.2As/Ga
x
In1-x
As
y
P1-y
/Ga0.51In0.49P/GaAs
quantum well structures can be used not only for maintaining
single lateral mode during high power operation but also for
increasing the catastrophic optical damage (COD) level of 980 nm pump
lasers. The fabricated 980 nm pump lasers with partially ion
implanted channels after ridge waveguide structure formation exhibited
high power operation up to 250 mW without any kink and
beam steering. A photoluminescence peak shift of 70 meV was
obtained by 120 keV Si-implantation and annealing at
900°C. Improvement of the COD level by
a minimum of 1.65 times is obtained by forming transparent windows
near facets
by Si implantation and annealing. A highly nonradiative polycrystalline phase of the active area may be the major cause of COD failure in the Al-free 980 nm lasers.
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