Doping two-dimensional (2D) semiconductors beyond their degenerate levels provides the opportunity to investigate extreme carrier density-driven superconductivity and phase transition in 2D systems. Chemical functionalization and the ionic gating have achieved the high doping density, but their effective ranges have been limited to ∼1 nm, which restricts the use of highly doped 2D semiconductors. Here, we report on electron diffusion from the 2D electride [CaN]·e to MoTe over a distance of 100 nm from the contact interface, generating an electron doping density higher than 1.6 × 10 cm and a lattice symmetry change of MoTe as a consequence of the extreme doping. The long-range lattice symmetry change, suggesting a length scale surpassing the depletion width of conventional metal-semiconductor junctions, was a consequence of the low work function (2.6 eV) with highly mobile anionic electron layers of [CaN]·e. The combination of 2D electrides and layered materials yields a novel material design in terms of doping and lattice engineering.

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