A hybrid-type surface-temperature sensor that combines the advantages of contact and non-contact sensing methods has been developed and that offers a way to overcome the weak points of both methods. The hybrid-type surface-temperature sensor is composed of two main components: a metal film that makes contact with the object and an optical sensor that is used to detect the radiance of the rear surface of the metal film. Temperature measurement using this thermometer is possible with an uncertainty of 0.5 K after compensating for systematic errors in the temperature range from 900 to 1,000 K. The response time of our previous hybrid-type sensor is, however, as long as several tens of seconds because the measurement must be carried out under thermally steady-state conditions. In order to overcome this problem, a newly devised rapid-response hybrid-type surface-temperature sensor was developed and that can measure the temperature of an object within 1 s by utilizing its transient heat transfer response. Currently, the temperature of a silicon wafer can be measured with an uncertainty of 1.0 K in the temperature range from 900 to 1,000 K. This sensor is expected to provide a useful means to calibrate in situ temperature measurements in various processes, especially in the semiconductor industry. This article introduces the basic concept and presents experimental results and discussions.
Automatic emissivity compensating radiation thermometry based on polaradiometry was applied to in situ wafer surface temperature measurement on a flash lamp annealing prototype system. The developed temperature measurement system consists of a dual polarization radiation thermometer and a modulating reference light source, which were mounted on two opposing ports of the process chamber. The intense background radiation from the flash lamp was successfully suppressed by introducing a water flow layer beneath the flash lamp unit and measuring at the water absorption band of 1.95 µm. Millisecond heating and cooling of the wafer was measured for various operating conditions of the flash lamp and for various silicon wafers including wafers with microstructures. The peak temperature was compared with the sheet resistance after treatment and device properties after fabrication. Good correlation was confirmed between sheet resistance and measured peak temperature for various flash lamp intensities irrespective of the surface emissivity or heating conditions. Transistor threshold voltage showed similar correlation, which verifies the applicability of the developed thermometer system to in situ measurement during production.
A hybrid-type surface temperature sensor combines the contact and noncontact methods, which allows us to overcome the shortcomings of both methods. The hybrid-type surface thermometer is composed mainly of two components: a metal film sheet that makes contact with an object and a radiometer that is used to detect the radiance of the rear surface of the metal film, which is actually a modified radiation thermometer. Temperature measurement using the hybrid-type thermometer with a several tens micrometer thick Hastelloy sheet, a highly heat and corrosion resistant alloy, is possible with a systematic error of −0.5K and random errors of ±0.5K, in the temperature range from 900to1000K. This thermometer provides a useful means for calibration of in situ temperature measurement in various processes, especially in the silicon semiconductor industry. This article introduces the basic idea of the hybrid-type surface sensor, presents experimental results and discussions, and finally describes some applications.
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