We demonstrate the applicability of thermal oxidation to control the photoluminescence (PL) from quantum-sized structures in porous silicon. Uniform photoluminescence samples with intense visible light observed under ultraviolet light at room temperature were quickly obtained without a long time hydrofluoric acid (HF) immersion. Applying different oxidation times or temperatures provides a very practical technique to control the luminescence color. By this way, we have observed a shift in the luminescence peak from 7600 to 6200 Å and a reduction in the spectral width from ∼1600 to ∼950 Å.
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