Articles you may be interested inPhysisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications Appl. Phys. Lett. 102, 074102 (2013); 10.1063/1.4791788 Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors J. Appl. Phys.Antibody-functionalized, Au-gated AlGaN / GaN high electron mobility transistors ͑HEMTs͒ were used to detect c-erbB-2, which is a breast cancer marker. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN / GaN HEMT drain-source current showed a rapid response of less than 5 s when target c-erbB-2 antigen in a buffer at clinically relevant concentrations was added to the antibody-immobilized surface. We could detect a range of concentrations from 16.7 to 0.25 g / ml. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaN / GaN HEMTs for breast cancer screening.
Antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect Perkinsus marinus. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN/GaN HEMT drain-source current showed a rapid response of less than 5 s when the infected solution was added to the antibody-immobilized surface. The sensor can be recycled with a phosphate buffered saline wash. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN/GaN HEMTs for Perkinsus marinus detection.
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