Wafer level constant voltage stress of metal insulator metal capacitors with TazOs dielectric show a bimodal time to failure distributions. The two re:imes of times to breakdown are separated by 2 orders of magnitude in time and this gap cannot be accessed with any constant voltage stress condition. The early failure mode is explained by thermal runaway model based on positive feedhxk loop:the high power dissipation in the MIM capacitors leads to an temperature increase, which in tum increases the leakage current of the dielectric and thus increases the power dissipation. This simple model explains a thermally unstable stress mode at high voltages and a thermally stable mode at lower voltages. The predicted critical current density at the beginning of the stress is consistent with experimental results. The temperature activation of the leakage current mechanism is shown to he 0.7eV. Other potential explanations for the early failure mode are discussed.
The requirements for the electrical characteristics of passive on-chip devices become more and more important. The electrical performance of RF circuits is predominantly restricted by the passives. New technologies and new device concepts are necessary to meet the demands. In this work, a trench capacitor developed for RF applications is presented for the first time. This so-called SilCap (silicon capacitor) device features very high capacitance density, extreme low-voltage dependence, excellent temperature stability, good RF performance and a high breakthrough voltage. First, the device function and the technological concept are introduced. The concept is realized without implementing cost-intensive high-k materials. This trench capacitor is integrated in the front end of line of a passive integration technology. The achieved specific capacitance density is compared to a standard planar capacitor. Performance of the SilCap in terms of quality factor and breakthrough voltage is shown. Finally, reliability data of this trench capacitor are presented with special focus on extrinsic and dielectric lifetime.
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