In summary, we have shown that the apparent displacement of substrate atoms observed in sputter profiling of a-Si:H films is due to the formation and bursting of bubbles at the interface between a-Si:H and the substrate. The bubbles are formed by the effect of the ion primary beam on the material. We assume that hydrogen is the mobile species which is required for the effect to occur. REFERENCES 1 . J, ~~~i~~ and w, t+lgers, Computer Enhanced s~~~~~~~~~~~ 2.
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