The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in finite-barrier GaAs/Ga, -,AI,As quantum wells as well as the binding energy as a function of well width. The effect of a magnetic field is also considered.
Polarizabilities of shallow donors and acceptors in finite-barrier GaAs/Gal -,Al,As quantum wells are calculated using Hasse's variational method within the effective mass approximation. The effect of spatially dependent screening on polarizabilities is taken into account with an r-dependent dielectric response. It is shown that spatially dependent screening effects can be more important for acceptors than for donors in GaAs/Gal-,A1,As quantum wells. The effects of electric and magnetic fields on binding energy are also studied.
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