We describe the growth, ion beam, and photoluminescence characterization of Ga1−xInxAs/GaAs strained-layer superlattices grown along the [111] axis. The layer thicknesses and composition are determined by Rutherford backscattering. Normal incidence channeling gives a minimum channeling yield of 5.7%. Strain conditions are found by off-normal incidence channeling using the angular scan method. Comparison of the photoluminescence spectrum of the superlattice with theoretical calculations provides strong evidence for the existence of strain-generated electric fields in [111] growth axis strained-layer superlattices.
Raman area maps measuring the strain in lattice-mismatched [111] and [001] oriented InxGa1−xAs/GaAs superlattices (x=0.1, 0.17) are presented and compared with independent x-ray rocking curve studies of the average strain in the same samples. We find that the LO phonon frequency, but not the TO frequency, is a valid measure of strain for [111] oriented superlattices exhibiting one-mode behavior. This is explained by the lack of compensation between the effects of alloying and strain for the TO mode in InxGa1−xAs. The capability to nondestructively map small growth variations in superlattice and buffer layer constituents is demonstrated.
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