Encapsulation of active and passive components is often required for protection from the adverse effects of corrosive environments. In this research, we have designed and developed a low frequency PECVD system that is capable of depositing silicon nitride (SiN) films that meet industry passivation requirements. A plasma frequency of 6OHz was used to deposit the SiN films which have refractive index from 2.0 to 2.3. The structural properties were also investigated. Low frequency SiN also showed excellent adherence (1 .85-7.70X103 psi in pull tests) and low compressive stress (1.09-8.19X109 dynes/cm2).
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