Abstract-Seven novel static RAM cells are described in this paper. All seven are a variation of the six-transistor differential memory cell containing a two-inverter feedback loop with n-type pass transistors between the inverter inputs and the bit-lines. Each variation contains some combination of virtual source transistors (Virtual Ground or V DD ) and transmission gates. Power and delay values are given for each of the seven designs with minimum sized transistors, as well as a discussion of improved performance with wider pass transistors. The new cells with the best performance in the areas of power consumption, delay, and power-delay product demonstrate improvements of 27.6%, 12.2%, and 24.1% respectively.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.