International audienceExchange bias based spintronics devices involve ferromagnetic/antiferromagnetic interfaces and concomitant layers intermixing. As a consequence, interfacial spin-glass-like phases with reduced properties and increased dispersions form and lower the device performance. It is therefore necessary to limit intermixing by introduction of diffusion barriers. One of the major difficulties is that the barrier must be inert. This paper uses blocking temperature distributions to quantify the interfacial quality of Co/IrMn based stacks. Inserting a (Cu/Pt) dual barrier fulfils the manifold requirements of limiting Co-Mn, Co-Pt, and Cu-Mn intermixing, which takes place when using either no or single Pt and Cu barriers, respectivel

International audienceSpintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferromagnetic/antiferromagnetic thin film, affect the device-to-device variability of exchange bias in magnetic applications once the film is nanofabricated