close to 60 GHz for different MOM designed in a CMOS 45nm process. The extracted lumped elements of the designed MOM capacitor are presented in Table 1. It is shown that the quality factor increase with the capacity density.
CONCLUSIONSAn innovative structure of 3D MOM capacitor designed in a standard CMOS 45-nm STMicroelectronics process was presented. These MOM capacitors dedicated to mmw applications present high capacitance density from 1 to 3.2 fF/lm 2 and losses lower than 1 dB at 60 GHz. Moreover, the presented MOM capacitors have higher Q (from 3 to 10) than MIM, and lower losses than 3D trench capacitors due to the very low-coupling effect with the substrate, in an advanced CMOS process.
ACKNOWLEDGMENTSThe authors thank N. Corrao, IMEP-LAHC, Grenoble, France, for the measurements. 2. C. Zhen,et al., A study of MIM on-chip capacitor using Cu/SiO 2 interconnect technology, IEEE Microwave Wireless Compon Lett 12 (2002), 246-248. 3. K. Büyüktas, et al., Simulation and modelling of a high performance trench capacitor for RF applications, Semicond Sci Technol 24 (2009). 4. K. Subramaniaml, et al., Design and modeling of metal finger capacitors for RF applications, In: IEEE Asia-Pacific Conference on Applied Electromagnetics, Johor Bahru, Malaysia, December, 2005, pp. 293-296. 5. J.N. Burghartz,et al., Microwave inductors and capacitors in standard multilevel interconnect silicon technology, IEEE Trans Microwave Theory Tech 44 (1996), 100-104. 6. E.P. Vandamme,et al., Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures, IEEE Trans Electron Dev 48 (2001), 737-742.ABSTRACT: A simple microstrip fed printed monopole antenna for the radio frequency identification (RFID) and wireless local area network (WLAN) is presented. The antenna has two different resonant current paths (forming an F-shaped structure) that support two resonances at 2.44 and 5.18 GHz, which are reserved for RFID and WLAN applications, respectively. Effectively omnidirectional radiation pattern and large impedance bandwidth has been observed both from simulation and experimental results. Impedance bandwidth for center frequency of 2.44 and 5.18 GHz are 0.65 GHz (2.12-2.77 GHz) and 0.59 GHz (4.91-5.50 GHz), respectively. The proposed antenna is simple in design and compact in size; providing broadband impedance matching, consistent omnidirectional radiation patterns and appropriate gain characteristics (>1.5dBi) in the RFID and WLAN frequency regions.