Continuous recording of intracellular activities in single cells is required for deciphering rare, dynamic and heterogeneous cell responses, which are missed by population or brief single-cell recording. Even if the field of intracellular recording is constantly proceeding, several technical challenges are still remained to conquer this important approach. Here, we demonstrate long-term intracellular recording by combining a vertical nanowire multi electrode array (VNMEA) with optogenetic stimulation to minimally disrupt cell survival and functions during intracellular access and measurement. We synthesized small-diameter and high-aspect-ratio silicon nanowires to spontaneously penetrate into single cells, and used light to modulate the cell's responsiveness. The light-induced intra-and extracellular activities of individual optogenetically-modified cells were measured simultaneously, and each cell showed distinctly different measurement characteristics according to the cell-electrode configuration. Intracellular recordings were achieved continuously and reliably without signal interference and attenuation over 24 hours. The integration of two controllable techniques, vertically grown nanowire electrodes and optogenetics, expands the strategies for discovering the mechanisms for crucial physiological and dynamic processes in various types of cells.Critical cellular dynamics, including transcriptional change, protein synthesis, receptor replacement, and synaptic plasticity in neural cells, take place over time periods ranging from several hours to days 1 . A common approach for discerning these cellular mechanisms in the single cell level is to measure its intracellular electrical activity using sharp microelectrodes or patch-clamping. However, as intracellular recording using these conventional electrodes is achieved by tearing the cell membrane, disruption of cell integrity limits the recording duration to several hours 2 , providing only brief 'snapshots' of cellular dynamics during limited experimental sessions 3 . Thus, such intermittent recordings have limitations in tracking single-unit activity over timescales relevant for most developmental and learning processes, or for pharmaceutical drug screening over long periods.Three-dimensional micro/nanostructure electrodes have shown superior feasibility for the electrophysiological study of single cells by accessing the cell interior and recent technologies allow simultaneous observations of the intracellular activity of individual cells in neuronal populations with high temporal/spatial resolution 4-17 . However, despite their advantages of high-sensitivity and minimal invasiveness, the reported time durations of intracellular recording using micro/nanostructure-based electrodes have not exceeded 80 min 4 . These intracellular recordings have been demonstrated by employing one of two agents: (i) external poration force achieved by a burst of electrical (electroporation) or optical (optoporation) 4 pulses applied through electrodes to increase the permeability ...
A spatially and temporally confined single neuron activation method exploiting the strong interfaces between a neuron and a nanowire electrode.
Since the discovery of graphene, layered transition metal dichalcogenides (TMDs) have been considered promising materials for applications in various fields because of their fascinating structural features and physical properties. Doping in semiconducting TMDs is essential for their practical application. In this regard, two-dimensional (2D) Si materials have emerged as a key component of 2D electronic, optics, sensing, and spintronic devices because of their complementary metal–oxide–semiconductor (CMOS) compatibility, high-quality oxide formation, moderated bandgap, and well-established doping techniques. Here, we report the tuning of the electronic properties of Si nanosheets (NSs) using a plasma-doping technique. Using this doping process, we fabricated p–n homojunction diodes and transistors with Si NSs. The estimated high ON/OFF ratio of ∼106 and field-effect hole mobility of 329 cm2 V–1 s–1 suggest a high crystal quality of the Si NSs. We also demonstrate vertically stacked heterostructured p–n junction diodes with MoS2, which exhibit rectifying properties and excellent light response.
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