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Lanthanum aminobenzoate (LAB), cerium aminobenzoate (CAB), and lanthanum and cerium aminobenzoate (LCAB) were synthesized with p‐aminobenzoic acid, lanthanum nitrate, or cerium nitrate as raw materials to study the influence of different rare earth elements on the stability of rare earth stabilizers. The thermal stability of by CAB, LCAB, and LAB toward poly(vinyl chloride) (PVC) was studied. The results of Congo red test and thermal aging test showed when three rare earth stabilizers acted independently, the advantages and disadvantages of thermal stability are as follows: LAB > CAB > LCAB. However, in compound experiments, the thermal stability of composite stabilizers compounded by CAB or LCAB with zinc stearate, calcium stearate, or pentaerythritol (PE) was slightly better than that of composite stabilizers compounded by LAB. Among of them, when the compounding scheme was LCAB:zinc stearate:PE = 1:1:3, the thermal stability time reached 60 minutes; CAB:zinc stearate:PE = 1:1:3, the thermal stability time reached 50 minutes, compared with the rare earth stabilizer alone, the composite thermal stabilizer gave PVC samples better antidiscoloration performance and longer thermal stability time.

The stress field in the channel of a silicon-on-insulator (SOI) N-type metal-oxide-semiconductor field-effect transistor (NMOSFET) with silicon-carbon alloy source and drain stressors was evaluated. The physical origin of the stress components in the transistor channel region was explained. The magnitude and distribution of the strain components, and their dependence on device design parameters such as the spacing between the silicon-carbon alloy stressors, the carbon mole fraction in the stressors and stressor recessed depth and raised height were investigated. The reduction in the stressor spacing or increase in the carbon mole fraction of the stressors and the stressor recessed depth and raised height increase the magnitude of the vertical compressive stress and the lateral tensile stress in the portion of the channel region where the inversion charge exists. This is beneficial for improving the electron mobility in NMOSFETs. A simple guiding principle for an optimum combination of the above-mentioned device design parameters and the trade-off between performance and junction leakage current degradation is discussed in this paper.

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Monolayer transition-metal dichalcogenide is a very promising two-dimensional material for future transistor technology. Monolayer molybdenum disulfide (MoS2), owing to the unique electronic properties of its atomically thin two-dimensional layered structure, can be made into a high-performance metal-oxide-semiconductor field-effect transistor, or MOSFET. In this work, we focus on band structure and carrier mobility calculations for MoS2. We use the tight-binding method to calculate the band structure, including a consideration of the linear combination of different atomic orbitals, the interaction of neighboring atoms, and spin-orbit coupling for different tight-binding matrices. With information about the band structure, we can obtain the density of states, the effective mass, and other physical quantities. Carrier mobility using the Kubo-Greenwood formula is calculated based on the tight-binding band structure.