Solution‐processed PbS colloidal quantum dots (CQDs) are promising optoelectronic materials for next‐generation infrared imagers due to their monolithic integratability with silicon readout circuit and tunable bandgap controlled by CQDs size. However, large‐size PbS CQDs (diameter >4 nm) for longer shortwave‐infrared photodetection consist mainly of {100} facets with incomplete surface passivation and unsatisfied stability. Here, it is reported that perovskite‐bridged PbS CQDs, in which the {100} facets of the CQDs are epitaxially bridged with CsPbI3–xBrx perovskite, can achieve improved passivation and enhanced stability in comparison with the traditional strategies. The resultant infrared CQDs photodiodes exhibit significantly reduced dark current, nearly 50% enhanced photoresponse, and improved work stability. These superior properties synergistically produce the most balanced performance (with a high −3 dB bandwidth of 42 kHz and an impressive specific detectivity of 6.2 × 1012 Jones) among the reported CQDs photodetectors.
PbS colloidal quantum dot (CQD) infrared
photodiodes have attracted
wide attention due to the prospect of developing cost-effective infrared
imaging technology. Presently, ZnO films are widely used as the electron
transport layer (ETL) of PbS CQDs infrared photodiodes. However, ZnO-based
devices still suffer from the problems of large dark current and low
repeatability, which are caused by the low crystallinity and sensitive
surface of ZnO films. Here, we effectively optimized the device performance
of PbS CQDs infrared photodiode via diminishing the influence of adsorbed
H2O at the ZnO/PbS CQDs interface. The polar (002) ZnO
crystal plane showed much higher adsorption energy of H2O molecules compared with other nonpolar planes, which could reduce
the interface defects induced by detrimentally adsorbed H2O. Based on the sputtering method, we obtained the [002]-oriented
and high-crystallinity ZnO ETL and effectively suppressed the adsorption
of detrimental H2O molecules. The prepared PbS CQDs infrared
photodiode with the sputtered ZnO ETL demonstrated lower dark current
density, higher external quantum efficiency, and faster photoresponse
compared with the sol–gel ZnO device. Simulation results further
unveiled the relationship between interface defects and device dark
current. Finally, a high-performance sputtered ZnO/PbS CQDs device
was obtained with a specific detectivity of 2.15 × 1012 Jones at −3 dB bandwidth (94.6 kHz).
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