Excess 
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 Passivation of Large 
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 Colloidal Quantum Dots to Reduce Dark-Current Density for Near-Infrared Detection

Yang, Junrui; Lu, Shuaicheng; Xia, Bing; Liu, Peilin; Yang, Yang; Xiao, Zewen; Zhang, Jianbing; Gao, Liang; Tang, Jiang

doi:10.1103/physrevapplied.19.014021

Cited by 11 publications

(7 citation statements)

References 42 publications

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“…The J BTB is common in cases where the diffusion region is extremely narrow or the doping concentration is very high, which is inapplicable for our CQD devices. The J TAT is related to defect states and plays a main role in large reverse bias 37 …”

Section: Resultsmentioning

confidence: 99%

“…The J TAT is related to defect states and plays a main role in large reverse bias. 37 Thus we simplified the formula as…”

Section: Jàv Characteristics and Analysis Of Cqd Photodiodesmentioning

confidence: 99%

“…Jung et al and Parmar et al have suppressed the dark current of PbS CQD photodiodes with a cut‐off wavelength of 1100 nm by optimizing the carrier transport layers 25,36 . Our team has previously reported works on optimizing the dark current performance by varying the ligand content and ZnO layer process 37,38 …”

Section: Introductionmentioning

confidence: 99%

“…25,36 Our team has previously reported works on optimizing the dark current performance by varying the ligand content and ZnO layer process. 37,38 In this work, we introduced double-ended ligands to supplementally passivate (100) facets of PbS CQDs in the classic halide-passivation method. Through density functional theory (DFT) simulations, a double-ended ligand of 4-(aminomethyl)pyridine (4-AMPY) was screened out with higher adsorption energy on (100) facets and lower adsorption energy on (111) facets compared with halides.…”

Section: Introductionmentioning

confidence: 99%

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Double‐ended passivator enables dark‐current‐suppressed colloidal quantum dot photodiodes for CMOS‐integrated infrared imagers

Liu,

Lu,

Liu

et al. 2023

InfoMat

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Lead sulfide (PbS) colloidal quantum dot (CQD) photodiodes integrated with silicon‐based readout integrated circuits (ROICs) offer a promising solution for the next‐generation short‐wave infrared (SWIR) imaging technology. Despite their potential, large‐size CQD photodiodes pose a challenge due to high dark currents resulting from surface states on non‐passivated (100) facets and trap states generated by CQD fusion. In this work, we present a novel approach to address this issue by introducing double‐ended ligands that supplementally passivate (100) facets of halide‐capped large‐size CQDs, leading to suppressed bandtail states and reduced defect concentration. Our results demonstrate that the dark current density is highly suppressed by about an order of magnitude to 9.6 nA cm−2 at −10 mV, which is among the lowest reported for PbS CQD photodiodes. Furthermore, the performance of the photodiodes is exemplary, yielding an external quantum efficiency of 50.8% (which corresponds to a responsivity of 0.532 A W−1) and a specific detectivity of 2.5 × 1012 Jones at 1300 nm. By integrating CQD photodiodes with CMOS ROICs, the CQD imager provides high‐resolution (640 × 512) SWIR imaging for infrared penetration and material discrimination.image

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Section: Resultsmentioning

confidence: 99%

“…The J TAT is related to defect states and plays a main role in large reverse bias. 37 Thus we simplified the formula as…”

Section: Jàv Characteristics and Analysis Of Cqd Photodiodesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Double‐ended passivator enables dark‐current‐suppressed colloidal quantum dot photodiodes for CMOS‐integrated infrared imagers

Liu,

Lu,

Liu

et al. 2023

InfoMat

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“…The exchange process was carried out using halide ligands, specifically lead chloride (PbI 2 ) and lead iodide (PbBr 2 ). Excessive concentration (0.116 mmol ml -1 ) of PbBr 2 ligand strategy was adopted, for the purpose of solving insufficient passivation issue of (100) facets on the PbS CQD surface, thus suppressing defects and increasing carrier lifetime [52]. The detailed steps were provided in SI.3.…”

Section: Preparation Of Pbs Cqds With Ligand Exchangementioning

confidence: 99%

Rapid and large-scale synthesis of MoS₂ via ultraviolet laser-assisted technology for photodetector applications

Xu,

Zeng,

et al. 2024

Nanotechnology

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Two-dimensional transition metal dichalcogenide (TMDC) thin films have been extensively employed in microelectronics research. Molybdenum disulfide (MoS2), as one of prominent candidates of this class, has been applied in photodetectors, integrated electronic devices, gas sensing, and electrochemical catalysis, owing to its extraordinary optoelectronic, chemical, and mechanical properties. Synthesis of MoS2 crystal film is the key to its application. However, the reported technology revealed several drawbacks, containing limited surface area, prolonged high-temperature environment, and unsatisfying crystallinity. In order to enhance the convenience of MoS2 applications, there is a pressing need for optimized fabrication technology, which could be quicker, with a large area, with adequate crystallinity and heat-saving. In this work, we presented an ultraviolet laser-assisted synthesis technology, accomplishing rapid growth (with the growth rate of about 40 um s-1) of centimeter-scale MoS2 films at room temperature. To achieve this, we self-assembled a displaceable reaction chamber system, coupled with krypton fluoride ultraviolet pulse laser. The laser motion speed and trajectory could be customized in the software, allowing the maskless patterning of crystal films. As application, we exhibited a photodetector with the integration of synthesized MoS2 and lead sulfide colloidal quantum dots (PbS CQDs), displaying broadband photodetection from ultraviolet, visible to near-infrared spectrum (365 ~ 1550 nm), with the detectivity of 109 ~ 1010 Jones, and the rising time of 0.2 ~ 0.3 s. This work not only demonstrated a high-process-efficiency synthesis of TMDC materials, but also has opened up new opportunities for ultraviolet laser used in optoelectronics.

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PbS Quantum Dots Ink with Months‐Long Shelf‐Lifetime Enabling Scalable and Efficient Short‐Wavelength Infrared Photodetectors

Wang,

Pinna,

Romero

et al. 2024

Advanced Materials

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The phase‐transfer ligand exchange of PbS quantum dots (QDs) has substantially simplified device fabrication giving hope for future industrial exploitation. However, this technique when applied to QDs of large size (> 4 nm) gives rise to inks with poor colloidal stability, thus hindering the development of QDs photodetectors in short‐wavelength infrared range (∼1000‐3000 nm). Here, we demonstrate that methylammonium lead iodide ligands can provide sufficient passivation of PbS QDs of size up to 6.7 nm, enabling inks with a minimum of ten‐week shelf‐life time, as proven by optical absorption and solution‐small angle X‐ray scattering. Furthermore, the maximum linear electron mobility of 4.5 × 10−2 cm2 V−1 s−1 was measured in field‐effect transistors fabricated with fresh inks, while transistors fabricated with the same solution after ten‐week storage retained 74% of the average starting electron mobility, demonstrating the outstanding quality both of the fresh and aged inks. Finally, photodetectors fabricated via blade‐coating exhibited 76% external quantum efficiency at 1300 nm and 1.8 × 1012 Jones specific detectivity, values comparable with devices fabricated using ink with lower stability and wasteful methods such as spin‐coating.This article is protected by copyright. All rights reserved

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Excess PbBr2 Passivation of Large PbS Colloidal Quantum Dots to Reduce Dark-Current Density for Near-Infrared Detection

Cited by 11 publications

References 42 publications

Double‐ended passivator enables dark‐current‐suppressed colloidal quantum dot photodiodes for CMOS‐integrated infrared imagers

Double‐ended passivator enables dark‐current‐suppressed colloidal quantum dot photodiodes for CMOS‐integrated infrared imagers

Rapid and large-scale synthesis of MoS₂ via ultraviolet laser-assisted technology for photodetector applications

PbS Quantum Dots Ink with Months‐Long Shelf‐Lifetime Enabling Scalable and Efficient Short‐Wavelength Infrared Photodetectors

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Excess PbBr2 Passivation of Large PbS Colloidal Quantum Dots to Reduce Dark-Current Density for Near-Infrared Detection

Cited by 11 publications

References 42 publications

Double‐ended passivator enables dark‐current‐suppressed colloidal quantum dot photodiodes for CMOS‐integrated infrared imagers

Double‐ended passivator enables dark‐current‐suppressed colloidal quantum dot photodiodes for CMOS‐integrated infrared imagers

Rapid and large-scale synthesis of MoS2 via ultraviolet laser-assisted technology for photodetector applications

PbS Quantum Dots Ink with Months‐Long Shelf‐Lifetime Enabling Scalable and Efficient Short‐Wavelength Infrared Photodetectors

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Rapid and large-scale synthesis of MoS₂ via ultraviolet laser-assisted technology for photodetector applications