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An energy conversion efficiency of 25.1% was achieved in heterojunction back contact (HBC) structure Si solar cell utilizing back contact technology and an amorphous silicon thinfilm technology. A new patterning process was established, and it was applied to the fabrication process of HBC cells. In addition, the unique technology of the surface mount technology concept contributed to the superior performance of HBC cell. A shortcircuit current density (J sc ) and an open-circuit voltage (V o c ) were 41.7 mA/cm 2 and 736 mV, respectively. The high J sc as well as the high V o c indicates the strength of HBC structure cell. Besides, a high fill factor of 0.82 was obtained, which shows that HBC structure cell does not have any fundamental critical losses caused from series resistance or shunt resistance. Such high values of I-V parameter means that the patterning process was properly performed.

Polyethylene single crystals were annealed on various kinds of substrates:  a glass plate, evaporated Pt/Pd, evaporated amorphous carbon, HOPG (highly organized pyrolytic graphite), and uniaxially oriented isotactic polypropylene (iPP). Their morphological changes on these substrates by annealing were observed in situ by AFM. On glass and Pt/Pd substrates, polyethylene single crystals started reorganizing from the periphery, accompanying thickening of lamellae, and eventually became molten. Polyethylene single crystals behaved quite differently between on amorphous carbon and on HOPG, which both had the identical chemical constitution:  on HOPG, fibrils were produced, extending radially from the center of polyethylene single crystals, while on amorphous carbon, lamellae thickened and melted down without forming any peculiar texture. This difference was caused by the difference in atomic array between the surfaces of HOPG and amorphous carbon. On oriented iPP, a fibrillar texture, with the long axis of fibrils oriented at an angle of 40° with the iPP fiber axis, was formed in the process of slow heating. The oriented fibrillar textures that were produced on HOPG and iPP in the heating process were formed under epitaxial control of the surface structure of substrate. The present work showed that oriented crystallization occurred through partial melting in the process of annealing.

These studies demonstrate that cisplatin and DACH-Ac-Pt differentially phosphorylate p53 through independent DNA damage-induced pathways, and that the kinase-mediated phosphorylation of p53 at Ser-15 or Ser-392 is unaltered in resistance. Moreover, the phosphorylation status of Ser-392 on its own does not appear to correlate with p21(WAF1/CIP1) or Mdm2 induction in these studies; however, a lack of increase in p21(WAF1/CIP1) by cisplatin, but not DACH-Ac-Pt, provides a correlation with resistance and its circumvention, and implicates the role for cyclin-dependent kinase inhibitor in the differential cytotoxic effects of the two platinum agents against resistant cells.

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