Unexpected residual effects of ultraviolet (UV) based measurements on SiO 2 /Si interface were studied using room temperature photoluminescence (RTPL) under various excitation wavelengths. Modulation (either increase or decrease) of RTPL intensity was measured from the UV exposed areas. Effects are investigated by controlled exposure with selected wavelength ranges and subsequent thermal treatments at 400 • C and 800 • C for 5 min in forming gas (96% N 2 + 4% H 2 ). Significant enhancement in RTPL intensity was observed and the residual effects were characterized after the thermal treatments. The mechanisms for RTPL intensity degradation after UV exposure and recovery after forming gas anneal are discussed.
Slight differences between supposedly identical process chambers are a well known problem in semiconductor manufacturing. In particular, individual plasma-aided process chambers are difficult to characterize and tune to match each other because plasma is a non-equilibrium state and can leave its "footprint" in subtle ways on a wafer. This process chamber mismatching phenomena was investigated in a dual chamber, commercial, high density plasma chemical vapor deposition system by monitoring SiO 2 /Si interface quality using multiwavelength room temperature photoluminescence and Raman spectroscopy. Effects on the SiO 2 /Si interface quality, from altering the gas flow pattern in the plasma process chamber, are also studied.
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