Absfract -A WCDMAiDCS dual-band RF front-end receiver IC fabricated in a 0.35-pm SiGe BiCMOS technology is presented. This RF receiver uses P novel fullydifferential LNA with dual input-stages to replace the requirement of paralleling two similar LNAs in previous dual-band designs. This chip dissipates 24mA from a 2.7-V supply and can be used in direct-conversion or low-IF receiver. The measured voltage gain, PldB and iIP3 are 32dB, -25dBm and -1SdBm, respectively.
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