A Ni-InAs source/drain nMOSFET is a promising future logic device. However, the specific contact resistivity, ρ int , between InAs and Ni-InAs is difficult to evaluate accurately because of the complex junction structure. In this study, we develop a multi-sidewall transmission line method (MSTLM) for the measurement of low contact resistivity with high accuracy. The MSTLM enables us to simplify the junction interface structure in terms of the resistance analysis, to eliminate the effects of the contact metal and to perform statistical analyses to mitigate sample variations. The high accuracy of measurement of ρ int is demonstrated by combining InAs-on-insulator (InAs-OI) substrates with the MSTLM. The evaluated ρ int of (3.0 ± 0.9) × 10 −8 Ω cm 2 for InAs with an electron concentration of 2 × 10 18 cm −3 is found to be in good agreement with the theoretically calculated value under a Schottky barrier height of 0 eV.
The specific contact resistance ρint of the InAs/Ni–InAs interface was evaluated by the multi-sidewall transmission line method (MSTLM), where Ni–InAs was formed by alloying Ni and InAs-on-insulator substrates. The revised test structure for MSTLM has been proposed, which can be easily fabricated. By evaluating each component of the parasitic resistance separately, the specific contact resistance of the InAs/Ni–InAs was accurately extracted. As a result, the record low ρint of (4.3 ± 2.5) × 10−9 Ω cm2 among metal/III-V contacts was obtained for the 30-nm-thick InAs/Ni–InAs interface with the average electron concentration of 9.1 × 1018 cm−3 for InAs, which is close to the Landauer limit. The comparison of the experimental and theoretical ρint indicates that there is no potential barrier at the InAs/Ni–InAs interface, which is attributable to the negative Schottky barrier height for electrons of InAs.
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