We propose pixel structures for large-size and high-resolution active matrix organic light-emitting diode (AMOLED) displays using a polycrystalline silicon (poly-Si) thin-film transistor (TFT) backplane. The proposed pixel structures compensate the variations of the threshold voltage and mobility of the driving TFT using the subthreshold current. The simulated results show that the emission current error of the proposed pixel structure B ranges from −2.25 to 2.02 least significant bit (LSB) when the variations of the threshold voltage and mobility of the driving TFT are ±0.5 V and ±10%, respectively.
Abstract-A CMOS-based temperature sensor is proposed for low-voltage and low-power on-chip thermal monitoring applications. The proposed temperature sensor converts a proportional to absolute temperature (PTAT) current to a PTAT frequency using an integrator and hysteresis comparator. In addition, it operates in the subthreshold region, allowing reduced power consumption. The proposed temperature sensor was fabricated in a standard 90 nm CMOS technology. Measurement results of the proposed temperature sensor show a temperature error of between −0.81 and +0.94°C in the temperature range of 0 to 70°C after one-point calibration at 30°C, with a temperature coefficient of 218 Hz/°C. Moreover, the measured energy of the proposed temperature sensor is 36 pJ per conversion, the lowest compared to prior works.
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