This paper proposes a pixel circuit with high resolution and high luminance uniformity for organic light emitting diode-on-silicon (OLEDoS) microdisplays. The proposed pixel circuit employs a simple structure that consists of four n-channel MOSFETs and one capacitor, resulting in high resolution. In addition, this circuit compensates for the threshold voltage (V th ) variation of the driving transistor caused by the body effect, which increases the V th as the source-to-body voltage of the driving transistor increases, thus reducing the emission current deviation, resulting in a high luminance uniformity. Moreover, the proposed pixel circuit extends the data voltage range using the capacitive coupling of the storage capacitance and the parasitic capacitance at the gate node of the driving transistor to precisely control the emission current. To verify the performance of the proposed pixel circuit, a test pattern with an array of the proposed 4T1C pixel circuits was fabricated on a single-crystalline silicon wafer as a backplane using a 110 nm standard CMOS process with 5.5 V high-voltage devices. The proposed pixel circuit occupies a unit sub-pixel area of 5.76µm × 1.92µm, which corresponds to a resolution of 4410 pixels per inch. The measurement results show that the emission current deviation error of the proposed pixel circuit ranges between −1.16% and +1.14%, which is improved from between −45.97% to +45.42% achieved in the conventional current-source type 2T1C pixel circuit, which does not compensate for the V th variation of the driving transistor. Moreover, the measured data voltage range of the proposed pixel circuit is extended to 1.618 V, which is 8.17 times wider than that of the conventional pixel circuit. Therefore, the proposed pixel circuit is very suitable for high resolution and high luminance uniformity of OLEDoS microdisplays.INDEX TERMS OLED, OLED-on-silicon, OLEDoS, microdisplay, high resolution, high luminance uniformity, pixel circuit.
We investigated the various lithologies and zircon U-Pb ages of metasedimentary rocks from the Yeongheung-Seonjae-Daebu Islands, western Gyeonggi Massif, whose geologic and geochronologic features are poorly constrained in spite of their significance for tectonic interpretation. Major lithology consists of quartzites or meta-sandstones commonly alternating with semi-pelitic schists, together with lesser amounts of calcareous sandstones with matrix-supported quartzite clasts, calcareous schists, and pelitic schists. Pelitic schists uncommonly contain large porphyroblasts of garnet as well as quartz veins with large crystals of muscovite and andalusite or kyanite. SHRIMP U-Pb ages of detrital zircons from two analyzed metasandstones define four age populations: Neoarchean (~2.5 Ga), Paleoproterozoic (~2.0-1.5 Ga), Neoproterozoic (~1.1-0.7 Ga), and Early Paleozoic (~560-400 Ma). The youngest zircon ages are clustered at ~420 Ma. These results suggest that the deposition of meta-sandstones took place after the Silurian, possibly during the Devonian, and are analogous to those of the Taean Formation reported from the western part of the Gyeonggi Massif. Moreover, The age distribution patterns of detrital zircons and the Barrovian-type metamorphic facies of pelitic schists are similar to those reported from the Imjingang
-Two simple pixel circuits are proposed for high resolution and high image quality organic light-emitting diode-on-silicon microdisplays. The proposed pixel circuits achieve high resolution due to simple pixel structure comprising three n-type MOSFETs and one storage capacitor, which are integrated into a unit subpixel area of 3 × 9 μm 2 using a 90 nm CMOS process. The proposed pixel circuits improve image quality by compensating for the threshold voltage variation of the driving transistors and extending the data voltage range. To verify the performance of the proposed pixel circuits, the emission currents of 24 pixel circuits are measured. The measured emission current deviation error of the proposed pixel circuits A and B ranges from À2.59% to +2.78%, and from À1.86% to +1.84%, respectively, which are improved from the emission current deviation error of the conventional current-source type pixel circuit when the threshold voltage variation is not compensated for, which ranges from À14.87% to +14.67%. In addition, the data voltage ranges of the proposed pixel circuits A and B are 1.193 V and 1.792 V, respectively, which are 2.38 and 3.57 times wider than the data voltage range of the conventional current-source type pixel circuit of 0.501 V.
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