Contact doping is considered crucial for reducing the
contact resistance
of two-dimensional (2D) transistors. However, a process for achieving
robust contact doping for 2D electronics is lacking. Here, we developed
a two-step doping method for effectively doping 2D materials through
a defect-repairing process. The method achieves strong and hysteresis-free
doping and is suitable for use with the most widely used transition-metal
dichalcogenides. Through our method, we achieved a record-high sheet
conductance (0.16 mS·sq–1 without gating) of
monolayer MoS2 and a high mobility and carrier concentration
(4.1 × 1013 cm–2). We employed our
robust method for the successful contact doping of a monolayer MoS2 Au-contact device, obtaining a contact resistance as low
as 1.2 kΩ·μm. Our method represents an effective
means of fabricating high-performance 2D transistors.
In article number 1901022, Di‐Yan Wang, Bing Joe Hwang, Chun‐Wei Chen and co‐workers demonstrate a novel three‐dimensional pyramid‐like graphene/p‐Si Schottky junction photocathode for H2 production. The formation of graphene/Si Schottky junctions with a 3D architecture is a promising approach to improve the performance and durability of Si‐based photoelectrochemical systems for water splitting or solar‐to‐fuel conversion.
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