Compared with conventional plasma-enhanced chemical vapor deposition, laser-assisted plasma-enhanced chemical vapor deposition ͑LAPECVD͒ can be used to deposit crystalline SiGe films on Si substrates at low temperature. In the LAPECVD system, a CO 2 laser with a wavelength of 10.6 m was utilized to assist the pyrolytical decomposition of SiH 4 and GeH 4 reactant gases. The resultant Si 0.78 Ge 0.22 films were obtained and verified through the use of the Auger electron spectroscopy measurement. As the diffraction pattern of a glancing incident angle X-ray diffraction measurement had indicated, several significant diffraction peaks corresponding to a diamond-cubic structure at ͑111͒, ͑220͒, and ͑311͒ were clearly observed. Crystalline SiGe films were also identified by the electron diffraction pattern of high-resolution transmission electron microscopy images.
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